High-Gain InAs Planar Avalanche Photodiodes

White, BS, Sandall, IC ORCID: 0000-0003-3532-0373, Zhou, X, Krysa, A, McEwan, K, David, JPR and Tan, CH (2016) High-Gain InAs Planar Avalanche Photodiodes. JOURNAL OF LIGHTWAVE TECHNOLOGY, 34 (11). pp. 2639-2644.

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Official URL: https://ieeexplore.ieee.org/document/7409922

Abstract

We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 10 14 cm -3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at -26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm -2 at -20 V at 200 K

Item Type:	Article
Uncontrolled Keywords:	Avalanche photodiodes, infrared detectors, ion implantation
Depositing User:	Symplectic Admin
Date Deposited:	29 Apr 2016 09:51
Last Modified:	19 Jan 2023 07:37
DOI:	10.1109/JLT.2016.2531278
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000992