Interface Engineering Routes for a Future CMOS Ge-based Technology


Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Mather, S, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D, Dimoulas, A et al (show 4 more authors) (2014) Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2). pp. 73-88.

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Abstract

<jats:p>We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, and secondly a barrier layer approach using Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Tm<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.</jats:p>

Item Type: Article
Additional Information: ## TULIP Type: Articles/Papers (Journal) ##
Depositing User: Symplectic Admin
Date Deposited: 07 Feb 2017 07:48
Last Modified: 19 Jan 2023 07:20
DOI: 10.1149/06102.0073ecst
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3005406
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