Weerakkody, AD, Sedghi, N 
ORCID: 0000-0002-2004-6159, Zhan, X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036
(2015)
Conduction mechanisms in Al-Ta<sub>2</sub>O<sub>5</sub>-Al<sub>2</sub>O<sub>3</sub>-Al rectifiers.
In: 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015-6-29 - 2015-7-2, University of Glasgow.
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Abstract
This paper investigates the dominant conduction mechanisms in two bi-layer Ta2O5-Al2O3 structures fabricated by atomic layer deposition and rf sputtering. In depth experimental (electrical and optical) and theoretical analysis have been conducted to demonstrate the dominancy of quantum mechanical tunnelling, a desirable conduction mechanism for high-speed nanorectifier device operation.
| Item Type: | Conference or Workshop Item (Unspecified) |
|---|---|
| Uncontrolled Keywords: | Metal-insulator-insulator-metal, conduction mechanisms, Schottky emission, Direct tunnelling, Fowler-Nordheim tunnelling, Spectroscopic ellipsometry |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 15 Feb 2017 11:07 |
| Last Modified: | 18 Oct 2023 04:27 |
| DOI: | 10.1109/prime.2015.7251352 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3005786 |
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