Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route


Liu, QH, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Xu, WY, Yang, L, Lim, EG ORCID: 0000-0003-0199-7386, Wang, QN, Wei, YL et al (show 1 more authors) (2019) Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

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Abstract

In this study, we develop a simple and eco-friendly aqueous route for the fabrication of sodium (Na) doped ZnO/AlOxthin-film transistors (TFTs). To prepare Na doped ZnO and AlOxthin films, ammonia water and deionized water were used as the precursor solvents. The A1Oxthin film annealed at 300°C showed an areal-capacitance of 129 nf/cm2 at 1 kHz. On the basis of its implementation as the gate oxide, fully solution-processed Na doped ZnO TFTs were fabricated and the electrical characteristics were systematically studied. The fully solution processed Na doped ZnO/A1OxTFTs exhibited a high field effect mobility of 21 cm2 V-1 s-1, a subthreshold swing of 0.58 V/decade, a threshold voltage of 0.8 V, and an on/off current ratio of 2×104.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: solution-processed, metal oxide thin-film transistors, low-temperature, aqueous route
Depositing User: Symplectic Admin
Date Deposited: 18 Feb 2019 09:47
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/eurosoi-ulis45800.2019.9041881
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3032961
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