Supardan, SN, Das, P 
ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036 et al (show 2 more authors)
(2020)
Band alignments of sputtered dielectrics on GaN.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7).
075303-075303.
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Abstract
The band alignments of sputtered ZrO2, Al2O3 and MgO on GaN have been measured experimentally using X-ray photoelectron spectroscopy (XPS). The valence band offsets (±0.2 eV) for ZrO2, Al2O3 and MgO on GaN using Kraut's method and charge-corrected XPS core levels were found to be 0.4 eV, 1.1 eV and 1.2 eV with corresponding conduction band offsets (±0.2 eV) of 1.3 eV, 2.0 eV and 2.8 eV, respectively. The electrical characterization of metal insulator semiconductor (MIS)-capacitors with different gate dielectrics (ZrO2, Al2O3 and MgO) has been performed as well. The current density of the MIS-capacitors with gate dielectrics MgO and Al2O3 at a positive bias of 1 V show lower leakage currents of 3.2 × 10-6 A cm-2 and 5.3 × 10-6 A cm-2 respectively, whereas, the MIS-capacitors with ZrO2 gate dielectric have the highest leakage current of 6.2 × 10-4 A cm-2 at 1 V.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | gallium nitride, high-k dielectrics, x-ray photoelectron spectroscopy, band offsets, Kraut's method, metal-insulator-semiconductor capacitor |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 27 Nov 2019 11:03 |
| Last Modified: | 19 Jan 2023 00:18 |
| DOI: | 10.1088/1361-6463/ab5995 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3063684 |
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