A Monolithically Integrated 2-Transistor Voltage Reference with a Wide Temperature Range Based on AlGaN/GaN Technology

Li, Ang ORCID: 0000-0002-1872-5005, Shen, Yi, Li, Ziqian, Zhao, Yinchao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen (2022) A Monolithically Integrated 2-Transistor Voltage Reference with a Wide Temperature Range Based on AlGaN/GaN Technology. IEEE Electron Device Letters, 43 (3). p. 1.

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Official URL: http://dx.doi.org/10.1109/led.2022.3146263

Abstract

This letter demonstrates a monolithic voltage reference based on technology of aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) Metal-Insulator-Semiconductor (MIS) High-Electron-Mobility Transistors (HEMTs). The simple but robust voltage reference consists of only two transistors (2T), namely a depletion-mode (D-mode) device and an enhancement-mode (E-mode) device. This implementation features a 2T structure to generate a predictable reference voltage while maintaining high stability over wide ranges of the supply voltage and temperature. Experimental results show a realization of 2.53 V reference voltage ( \text{V}-{REF} ) for a supply voltage range of 4.8 to 50 V, a maximum \text{V}-{REF} line sensitivity of 0.077 % /\text{V} and a temperature coefficient of 26.233.9 ppm/°C in the temperature range from-25 to 250 °C. The voltage reference circuit also features a fast initialization with a start-up time of 387 ns at 25 °C and 841 ns at 250 °C. The results demonstrate a useful design and implementation of a thermally stable reference voltage for applications in biasing and sensing circuits to achieve the compact all-GaN monolithic integration of control/protection blocks in the smart power systems.

Item Type:	Article
Uncontrolled Keywords:	AlGaN/GaN, MIS-HEMT, monolithic integration, voltage reference, all-GaN solution
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User:	Symplectic Admin
Date Deposited:	27 Jan 2022 10:17
Last Modified:	15 Mar 2024 03:07
DOI:	10.1109/led.2022.3146263
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3147675