Design and evaluation of UKRI-MPW0: An HV-CMOS prototype for high radiation tolerance

Zhang, C ORCID: 0000-0001-6135-3131, Franks, M, Hammerich, J ORCID: 0000-0002-5556-1775, Karim, N, Powell, S and Vilella, E (2022) Design and evaluation of UKRI-MPW0: An HV-CMOS prototype for high radiation tolerance. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1040. p. 167214.

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Official URL: http://dx.doi.org/10.1016/j.nima.2022.167214

Abstract

High-Voltage CMOS (HV-CMOS) sensors are emerging as a prime candidate for future tracking applications that have extreme requirements on material budget, pixel granularity, time resolution and radiation tolerance. This article presents a new HV-CMOS prototype chip, UKRI-MPW0, aimed at pushing some of the boundaries of these sensors. This HV-CMOS chip implements a novel sensor cross-section which is optimised for backside biasing to unprecedented high voltages. Preliminary measurements have shown the chip is able to withstand high bias voltages (>600V) much beyond the state of the art, thus promising a large improvement in radiation tolerance. The design details and initial performance evaluation are presented in this paper.

Item Type:	Article
Uncontrolled Keywords:	HV-CMOS, UKRI-MPW0, Backside biasing, High radiation tolerance
Divisions:	Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	09 Aug 2022 08:31
Last Modified:	18 Jan 2023 20:53
DOI:	10.1016/j.nima.2022.167214
Open Access URL:	https://doi.org/10.1016/j.nima.2022.167214
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3160778