An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

Fang, YX, Xu, WY, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Yang, L, Zhao, C and Zhao, CZ (2021) An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. In: 2021 International Conference on IC Design and Technology (ICICDT), 2021-9-15 - 2021-9-17.

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Official URL: http://dx.doi.org/10.1109/icicdt51558.2021.9626540

Abstract

In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO2) irradiation.

Item Type:	Conference or Workshop Item (Unspecified)
Additional Information:	(c) 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords:	Gate dielectric, inverter, radiation hardness, Solution-process, ZrLaO
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	12 Apr 2023 09:35
Last Modified:	27 Apr 2024 16:03
DOI:	10.1109/ICICDT51558.2021.9626540
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3169538