A Supply Voltage Insensitive Two-Transistor Temperature Sensor with PTAT/CTAT Outputs based on Monolithic GaN Integrated Circuits

Li, Ang ORCID: 0000-0002-1872-5005, Li, Fan, Chen, Kaiwen, Zhu, Yuhao, Wang, Weisheng, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing and Liu, Wen (2023) A Supply Voltage Insensitive Two-Transistor Temperature Sensor with PTAT/CTAT Outputs based on Monolithic GaN Integrated Circuits. IEEE Transactions on Power Electronics, 38 (9). pp. 1-5.

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2023-TPE-AngLI-A_Supply_Voltage_Insensitive_Two-Transistor_Temperature_Sensor_with_PTAT_CTAT_Outputs_based_on_Monolithic_GaN_Integrated_Circuits.pdf - Author Accepted Manuscript
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Official URL: http://dx.doi.org/10.1109/tpel.2023.3288937

Abstract

The article presents a monolithically integrated temperature sensor using a two-transistor (2 T) configuration based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). By adjusting the gate size ratio of the depletion-mode (D-mode) device and enhancement-mode (E-mode) device, the output type of the sensor can be converted from proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT). Experimental results demonstrate that the 2 T configuration achieves PTAT/CTAT output with high temperature sensitivity (PTAT/CTAT: 15.86/$-$10.53 mV/$^\circ$C) over a wide temperature range of 25 °C-250 °C and a broad supply voltage range of 8-60 V, attributed to the superior characteristics of the GaN transistor. In addition, the integrated over-temperature protection (OTP) block based on this temperature sensor has been fabricated in the laboratory, which features a fast response time (381 ns at 150 $^\circ$C). These results demonstrate the viability of on-chip integrated sensors in OTP circuits that are fully compatible with 48 V applications and a high-temperature environment, paving the way for the development of high-power density all-GaN smart power systems.

Item Type:	Article
Uncontrolled Keywords:	Complementary to absolute temperature (CTAT), gallium nitride (GaN), monolithic integration, over-temperature protection, proportional to absolute temperature (PTAT), temperature sensor
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User:	Symplectic Admin
Date Deposited:	03 Jul 2023 09:07
Last Modified:	15 Mar 2024 03:07
DOI:	10.1109/tpel.2023.3288937
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3171405