Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

Lin, Ya-Xun, Chao, Der-Sheng, Liang, Jenq-Horng, Shen, Yao-Luen, Huang, Chih-Fang, Hall, Steve ORCID: 0000-0001-8387-1036 and Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 (2023) Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height. SOLID-STATE ELECTRONICS, 207. p. 108723.

Text Lin et al-SSE Letters-accepted manuscript-revised clean copy.docx - Author Accepted Manuscript Access to this file is embargoed until 26 July 2024. Download (458kB)

Abstract

Quasi-vertical Schottky Barrier Diodes (SBDs) with near to ideal turn-on voltage and ideality factor (n) of 1.02, were fabricated on a GaN on Si substrate. The average turn-on voltage and on-resistance values were found to be 0.23 ± 0.005 V (at 1 A/cm2) and 1.76 ± 0.11 mΩcm2, respectively with diode series resistance of 11 Ω. The analysis of the current–voltage curve revealed a temperature-independent barrier height, however the capacitance–voltage method showed a negative temperature coefficient. This discrepancy is discussed in the paper. Variable range hopping through dislocations is shown to be the dominant reverse current leakage mechanisms identified in the fabricated diode, with a characteristic temperature, T0 of 2 × 1010 K.

Item Type:	Article
Uncontrolled Keywords:	Gallium nitride, Schottky barrier diode, Variable range hopping, Dislocation
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User:	Symplectic Admin
Date Deposited:	15 Sep 2023 07:19
Last Modified:	22 Feb 2024 10:52
DOI:	10.1016/j.sse.2023.108723
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3172763