Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance

Zhang, C ORCID: 0000-0001-6135-3131, Hammerich, J ORCID: 0000-0002-5556-1775, Powell, S ORCID: 0009-0006-2482-1948, Vilella, E ORCID: 0000-0002-7865-2856 and Wade, B ORCID: 0000-0001-9287-7368 (2024) Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance. Journal of Instrumentation, 19 (03). C03061-C03061.

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Official URL: http://dx.doi.org/10.1088/1748-0221/19/03/c03061

Abstract

<jats:title>Abstract</jats:title> <jats:p>UKRI-MPW0 was developed to further improve the radiation tolerance of HV-CMOS pixel sensors. It implements a novel sensor cross-section that uses backside-only biasing to allow high substrate bias voltages > 600 V. In this contribution, the measured results of irradiated UKRI-MPW0 samples are presented, including their current-to-voltage (I-V) characteristics, depletion depth and pixel performance. The chip is proved to have survived high radiation fluence of 3 × 10<jats:sup>15</jats:sup> n<jats:sub>eq</jats:sub>/cm<jats:sup>2</jats:sup>.</jats:p>

Item Type:	Article
Divisions:	Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	03 Apr 2024 14:19
Last Modified:	04 Apr 2024 19:10
DOI:	10.1088/1748-0221/19/03/c03061
Related URLs:	Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3180038