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Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Aluminium doped Ga2O3 for GaN MIS-HEMTs. In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.

Jones, L, Das, Partha ORCID: 0000-0003-1147-6541, Manzanera, TP, Gibbon, JT ORCID: 0000-0003-1548-0791, Potter, Richard ORCID: 0000-0003-0896-4536, Chalker, Paul ORCID: 0000-0002-2295-6332, Mahapatra, Rajat, Dhanak, Vin and Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 (2019) Atomic Layer Deposited TiO2/Al2O3 Nanolaminates on GaN. In: Isulating Films on Semiconductors (INFOS) 2019, 2019-6-30 - 2019-7-3, Clare College, University of Cambridge.

Gibbon, JT ORCID: 0000-0003-1548-0791 (2019) Band Alignments and Interfaces in Kesterite Photovoltaics. Doctor of Philosophy thesis, University of Liverpool.

Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X (2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8 (6). 065011-065011.

Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X (2018) Band alignments at Ga₂O₃ heterojunction interfaces with Si and Ge. AIP ADVANCES, 8 (6). 065011-.

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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X, Zhang, WD, Zhang, JF et al (show 3 more authors) , Hall, S ORCID: 0000-0001-8387-1036, Robertson, J and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111 (9). 092904-.

Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P (2019) Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528. p. 125254.

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Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2017) Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64 (3). pp. 1225-1230.

Garza-Hernandez, R, Edwards, HJ, Gibbon, JT, Alfaro-Cruz, MR, Dhanak, VR ORCID: 0000-0001-8053-654X and Aguirre-Tostado, FS (2021) Tunable crystal structure of Cu₂SnS₃ deposited by spray pyrolysis and its impact on the chemistry and electronic structure. JOURNAL OF ALLOYS AND COMPOUNDS, 881. p. 160552.

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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF et al (show 3 more authors) , Robertson, J, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). 102902-1-102902-4.