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Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R ORCID: 0000-0002-2295-6332, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming et al (show 55 more authors) , De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Haeberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, Maerz, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, EMS, Oliver, Stephen, Palacios, Tomas, Piedra, Daniel, Plissonnier, M, Reddy, R, Sun, Min, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan and Zhang, Yuhao (2018) The 2018 GaN power electronics roadmap. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (16). p. 163001.

Roberts, Joseph, Chalker, Paul ORCID: 0000-0002-2295-6332, Lee, Kean Boon, Houston, Peter, Cho, S Jin, Thayne, Iain, Guiney, Iver, Wallis, David and Humphreys, Colin (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901-.