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Number of items: 9.


Li, Ang ORCID: 0000-0002-1872-5005, Shen, Yi, Li, Ziqian, Li, Fan, Sun, Ruize, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022) A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits. IEEE Electron Device Letters, 44 (2). pp. 333-336.


Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou
(2018) Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-6-6 - 2018-6-8.


Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 2 more authors) (2019) Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics, 58 (5). 056505-056505.


Cui, Miao
(2021) Monolithic Integration of GaN DC-DC Converters: Technology and Characterization. PhD thesis, University of Liverpool.


Li, Ang ORCID: 0000-0002-1872-5005, Shen, Yi, Li, Ziqian, Zhao, Yinchao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022) A Monolithically Integrated 2-Transistor Voltage Reference with a Wide Temperature Range Based on AlGaN/GaN Technology. IEEE Electron Device Letters, 43 (3). p. 1.


Li, Ang
(2023) Monolithically Integrated GaN MIS-HEMT Blocks for Power Conversion System. PhD thesis, University of Liverpool.


Shi, Yizhi, Jiang, Zhenzhen ORCID: 0000-0003-3306-883X, Lam, Sang, Leach, Mark, Wang, Jingchen and Lim, Eng Gee ORCID: 0000-0003-0199-7386
(2017) Multi-GHz Microstrip Transmission Lines Realised by Screen Printing on Flexible Substrates. In: 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2017-12-14 - 2017-12-16.


Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016) Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372. pp. 14-28.


Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). pp. 673-682.

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