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Moloney, J, Tesh, O, Singh, M, Roberts, JW, Jarman, JC, Lee, LC, Huq, TN, Brister, J, Karboyan, S, Kuball, M et al (show 3 more authors)
(2019)
Atomic layer deposited α-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52 (47).
p. 475101.
Nicol, D, Oshima, Y, Roberts, JW, Penman, L, Cameron, D, Chalker, PR 
ORCID: 0000-0002-2295-6332, Martin, RW and Massabuau, FC-P
(2023)
Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>.
APPLIED PHYSICS LETTERS, 122 (6).
062102-.
Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P
(2019)
Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition.
JOURNAL OF CRYSTAL GROWTH, 528.
p. 125254.
Roberts, JW, Jarman, JC, Johnstone, DN, Midgley, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P
(2018)
alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire.
JOURNAL OF CRYSTAL GROWTH, 487.
pp. 23-27.