Up a level |
Jones, Leanne, Xing, Zongda, Swallow, Jack, Shiel, Huw, Featherstone, Thomas, Smiles, Matthew ORCID: 0000-0003-2530-5647, Fleck, Nicole, Thakur, Pardeep, Lee, Tien-Lin, Hardwick, Laurence ORCID: 0000-0001-8796-685X et al (show 4 more authors)
(2022)
Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2).
The Journal of Physical Chemistry C: Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter, 126 (49).
pp. 21022-21033.
Mariotti, Silvia, Al Turkestani, Mohammed, Hutter, Oliver S, Papageorgiou, Georgios, Major, Jonathan D ORCID: 0000-0002-5554-1985, Swallow, Jack, Nayak, Pabitra K, Snaith, Henry J, Dhanak, Vinod R ORCID: 0000-0001-8053-654X and Durose, Ken ORCID: 0000-0003-1183-3211
(2020)
Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications.
IEEE JOURNAL OF PHOTOVOLTAICS, 10 (4).
pp. 945-951.
Smiles, Matthew J ORCID: 0000-0003-2530-5647, Skelton, Jonathan, Shiel, Huw, Jones, Leanne AH ORCID: 0000-0002-4654-3882, Swallow, Jack, Edwards, Holly, Featherstone, Thomas, Murgatroyd, Philip, Thakur, Pardeep Kumar, Lee, Tien-Lin et al (show 2 more authors)
(2021)
Ge 4s2 Lone Pairs and Band Alignments in GeS and GeSe for photovoltaics.
Journal of Materials Chemistry A, 9 (39).
pp. 22440-22452.
Jones, Leanne ORCID: 0000-0002-4654-3882, Linhart, Wojciech, Fleck, Nicole ORCID: 0000-0001-7800-056X, Swallow, Jack, Murgatroyd, Philip, Shiel, Huw, Featherstone, Thomas, Smiles, Matthew ORCID: 0000-0003-2530-5647, Thakur, Pardeep, Lee, Tien-Lin et al (show 9 more authors)
(2020)
Sn
5
s
2
lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation.
Physical Review Materials, 4 (7).
074602-.
Swallow, Jack, Varley, Joel, Jones, Leanne, Gibbon, James ORCID: 0000-0003-1548-0791, Piper, Louis, Dhanak, Vinod ORCID: 0000-0001-8053-654X and Veal, TD ORCID: 0000-0002-0610-5626
(2019)
Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level.
APL Materials, 7 (02).
022528-.