Study of neutron irradiation effects in Depleted CMOS detector structures


Mandic, I, Cindro, V, Debevc, J, Gorisek, A, Hiti, B, Kramberger, G, Skomina, P, Zavrtanik, M, Mikuz, M, Vilella, E et al (show 5 more authors) (2022) Study of neutron irradiation effects in Depleted CMOS detector structures. JOURNAL OF INSTRUMENTATION, 17 (3). P03030-P03030.

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Abstract

<jats:title>Abstract</jats:title> <jats:p>In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 kΩcm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2·10<jats:sup>15</jats:sup> n<jats:sub>eq</jats:sub>/cm<jats:sup>2</jats:sup>. The depletion depth was measured with Edge-TCT. The effective space charge concentration N<jats:sub>eff</jats:sub> was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N<jats:sub>eff</jats:sub> on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N<jats:sub>eff</jats:sub> and detector current up to 1280 minutes at 60°C was made. It was found that N<jats:sub>eff</jats:sub> and current in reverse biased detector behave as expected for irradiated silicon.</jats:p>

Item Type: Article
Uncontrolled Keywords: Particle tracking detectors (Solid-state detectors), Si microstrip and pad detectors, Solid state detectors
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 07 Apr 2022 13:19
Last Modified: 18 Jan 2023 21:05
DOI: 10.1088/1748-0221/17/03/P03030
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3152364
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