Mandic, I, Cindro, V, Debevc, J, Gorisek, A, Hiti, B, Kramberger, G, Skomina, P, Zavrtanik, M, Mikuz, M, Vilella, E et al (show 5 more authors)
(2022)
Study of neutron irradiation effects in Depleted CMOS detector structures.
JOURNAL OF INSTRUMENTATION, 17 (3).
P03030-P03030.
Text
2112.10738_preprint.pdf - Published version Download (2MB) | Preview |
Abstract
<jats:title>Abstract</jats:title> <jats:p>In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 kΩcm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2·10<jats:sup>15</jats:sup> n<jats:sub>eq</jats:sub>/cm<jats:sup>2</jats:sup>. The depletion depth was measured with Edge-TCT. The effective space charge concentration N<jats:sub>eff</jats:sub> was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N<jats:sub>eff</jats:sub> on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N<jats:sub>eff</jats:sub> and detector current up to 1280 minutes at 60°C was made. It was found that N<jats:sub>eff</jats:sub> and current in reverse biased detector behave as expected for irradiated silicon.</jats:p>
Item Type: | Article |
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Uncontrolled Keywords: | Particle tracking detectors (Solid-state detectors), Si microstrip and pad detectors, Solid state detectors |
Divisions: | Faculty of Science and Engineering > School of Physical Sciences |
Depositing User: | Symplectic Admin |
Date Deposited: | 07 Apr 2022 13:19 |
Last Modified: | 18 Jan 2023 21:05 |
DOI: | 10.1088/1748-0221/17/03/P03030 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3152364 |