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Birkett, M ORCID: 0000-0002-6076-6820, Savory, CN, Fioretti, AN, Thompson, P ORCID: 0000-0002-9697-6141, Muryn, CA, Weerakkody, AD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Treharne, R, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 3 more authors) , Scanlon, DO, Zakutayev, A and Veal, TD ORCID: 0000-0002-0610-5626 (2017) Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95 (11). 115201-.

Whittles, T ORCID: 0000-0002-5154-7511, Burton, L, Skelton, J, Walsh, A, Veal, TD ORCID: 0000-0002-0610-5626 and Dhanak, VR (2016) Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory. Chemistry of Materials, 28 (11). pp. 3718-3726.

Linhart, WM, Rajpalke, MK, Buckeridge, J, Murgatroyd, PAE, Bomphrey, JJ, Alaria, J ORCID: 0000-0001-5868-0318, Catlow, CRA, Scanlon, DO, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626 (2016) Band gap reduction in InN<i>_x</i>Sb_1-<i>x</i> alloys: Optical absorption, k . P modeling, and density functional theory. APPLIED PHYSICS LETTERS, 109 (13). 132104-.

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Birkett, Max ORCID: 0000-0002-6076-6820, Savory, Christopher N, Rajpalke, Mohana K, Linhart, Wojciech M, Whittles, Thomas J, Gibbon, James T ORCID: 0000-0003-1548-0791, Welch, Adam W, Mitrovic, I ORCID: 0000-0003-4816-8905, Zakutayev, Andriy, Scanlon, David O et al (show 1 more authors) and Veal, TD ORCID: 0000-0002-0610-5626 (2018) Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6 (8). 084904-.

Birkett, M ORCID: 0000-0002-6076-6820, Linhart, W, Stoner, J, Phillips, LJ ORCID: 0000-0001-5181-1565, Durose, K ORCID: 0000-0003-1183-3211, Alaria, J ORCID: 0000-0001-5868-0318, Major, JD ORCID: 0000-0002-5554-1985, Kudrawiec, R and Veal, TD ORCID: 0000-0002-0610-5626 (2018) Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance. APL Materials, 6 (8).

Alsawi, A, Sait, CRJ, Hesp, D, Unsworth, P, Ashwin, MJ ORCID: 0000-0001-8657-8097, Dhanak, VR ORCID: 0000-0001-8053-654X, Veal, TD ORCID: 0000-0002-0610-5626 and Weightman, P (2023) Core hole electron screening in InSb. Journal of Electron Spectroscopy and Related Phenomena, 269. p. 147402.

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Speckbacher, M, Treu, J, Whittles, TJ ORCID: 0000-0002-5154-7511, Linhart, WM, Xu, X, Saller, K, Dhanak, VR, Abstreiter, G, Finley, JJ, Veal, TD ORCID: 0000-0002-0610-5626 et al (show 1 more authors) and Koblmüller, G (2016) Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 16 (8). pp. 5135-5142.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Dhanak, VR ORCID: 0000-0001-8053-654X, Linhart, WM, Veal, TD ORCID: 0000-0002-0610-5626, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D et al (show 1 more authors) and Dimoulas, A (2014) Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115 (11). 114102: 1-16.

Rajpalke, MK, Linhart, WM, Birkett, M ORCID: 0000-0002-6076-6820, Yu, KM, Scanlon, DO, Buckeridge, J, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626 (2013) Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103 (14). 142106-.

Segercrantz, N, Slotte, J, Makonnen, I, Tuomisto, F, Sandall, IC ORCID: 0000-0003-3532-0373, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626 (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x  Bi x. Journal of Physics D: Applied Physics, 50 (29).

Linhart, WM, Gladysiewicz, M, Kopaczek, J, Rajpalke, MK, Ashwin, MJ ORCID: 0000-0001-8657-8097, Veal, TD ORCID: 0000-0002-0610-5626 and Kudrawiec, R (2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50 (37). p. 375102.

Buckeridge, J, Veal, TD ORCID: 0000-0002-0610-5626, Catlow, CRA and Scanlon, DO (2019) Intrinsic point defects and the <i>n</i>- and <i>p</i>-type dopability of the narrow gap semiconductors GaSb and InSb. PHYSICAL REVIEW B, 100 (3). 035207-.

Linhart, WM, Rajpalke, MK, Birkett, M ORCID: 0000-0002-6076-6820, Walker, D, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626 (2019) Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52 (4). 045105-045105.

Birkett, M ORCID: 0000-0002-6076-6820 (2016) Optical properties of earth-abundant semiconductors for renewable energy. PhD thesis, University of Liverpool.

Bhachu, Davinder S, Scanlon, David O, Sankar, Gopinathan, Veal, TD ORCID: 0000-0002-0610-5626, Egdell, Russell G, Cibin, Giannantonio, Dent, Andrew J, Knapp, Caroline E, Carmalt, Claire J and Parkin, Ivan P (2015) Origin of High Mobility in Molybdenum-Doped Indium Oxide. CHEMISTRY OF MATERIALS, 27 (8). pp. 2788-2796.

Kopaczek, J, Rajpalke, MK, Linhart, WM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097, Kudrawiec, R and Veal, TD ORCID: 0000-0002-0610-5626 (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. APPLIED PHYSICS LETTERS, 105 (11). 112102-.

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Swallow, Jack EN, Williamson, Benjamin AD, Sathasivam, Sanjayan, Birkett, Max ORCID: 0000-0002-6076-6820, Featherstone, Thomas J, Murgatroyd, Philip AE, Edwards, Holly J, Lebens-Higgins, Zachary W, Duncan, David A, Farnworth, Mark et al (show 10 more authors) , Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis FJ, Regoutz, Anna, Carmalt, Claire J, Parkin, Ivan P, Dhanak, Vinod R, Scanlon, David O and Veal, TD ORCID: 0000-0002-0610-5626 (2020) Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3. Materials Horizons, 7 (1). pp. 236-243.

Kopaczek, J, Kudrawiec, R, Linhart, WM, Rajpalke, MK, Yu, KM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097, Misiewicz, J and Veal, TD ORCID: 0000-0002-0610-5626 (2013) Temperature dependence of the band gap of GaSb_1-xBi_x alloys with 0 &lt; x ≤ 0.042 determined by photoreflectance. APPLIED PHYSICS LETTERS, 103 (26). 261907-.

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Polak, MP, Scharoch, P, Kudrawiec, R, Kopaczek, J, Winiarski, MJ, Linhart, WM, Rajpalke, MK, Yu, KM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097 et al (show 1 more authors) and Veal, TD ORCID: 0000-0002-0610-5626 (2014) Theoretical and experimental studies of electronic band structure for GaSb_1-xBi_x in the dilute Bi regime. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47 (35). p. 355107.

Swallow, Jack, Varley, Joel, Jones, Leanne, Gibbon, James ORCID: 0000-0003-1548-0791, Piper, Louis, Dhanak, Vinod ORCID: 0000-0001-8053-654X and Veal, TD ORCID: 0000-0002-0610-5626 (2019) Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level. APL Materials, 7 (02). 022528-.

Featherstone, TJ, Swallow, JEN, Major, JD ORCID: 0000-0002-5554-1985, Durose, K ORCID: 0000-0003-1183-3211 and Veal, TD ORCID: 0000-0002-0610-5626 (2018) Transparent Ta doped SnO₂ films deposited by RF co-sputtering. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018-6-10 - 2018-6-15, Waikoloa, Hawaii.

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Arca, E, Kehoe, AB, Veal, TD ORCID: 0000-0002-0610-5626, Shmeliov, A, Scanlon, DO, Downing, C, Daly, D, Mullarkey, D, Shvets, IV, Nicolosi, V et al (show 1 more authors) and Watson, GW (2017) Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO. Journal of Materials Chemistry C, 5 (47). pp. 12610-12618.

Farahani, SK Vasheghani, Veal, TD ORCID: 0000-0002-0610-5626, Mudd, JJ, Scanlon, DO, Watson, GW, Bierwagen, O, White, ME, Speck, JS and McConville, CF (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO₂ films. PHYSICAL REVIEW B, 90 (15). 155413-.