Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178. 213 - 216.

Text A Shaw et al MEE 2017x.pdf - Accepted Version Download (955kB)

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	18 May 2017 12:12
Last Modified:	25 Jan 2022 18:13
DOI:	10.1016/j.mee.2017.05.043
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3007477

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• Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. (deposited 27 Apr 2017 06:20)
  • Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. (deposited 18 May 2017 12:12) [Currently Displayed]