Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors



Partida Manzanera, T
(2017) Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors. PhD thesis, University of Liverpool.

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Item Type: Thesis (PhD)
Divisions: Fac of Science & Engineering > School of Engineering
Depositing User: Symplectic Admin
Date Deposited: 13 Aug 2018 09:59
Last Modified: 09 Jan 2021 06:10
DOI: 10.17638/03014195
Supervisors:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3014195