Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors

Partida Manzanera, T ORCID: 0000-0002-2834-6340 (2017) Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors PhD thesis, University of Liverpool.

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Item Type:	Thesis (PhD)
Divisions:	Faculty of Science & Engineering > School of Engineering
Depositing User:	Symplectic Admin
Date Deposited:	13 Aug 2018 09:59
Last Modified:	19 Jan 2023 06:48
DOI:	10.17638/03014195
Supervisors:	Potter, Richard J ORCID: 0000-0003-0896-4536
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3014195
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