Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors

Partida Manzanera, T ORCID: 0000-0002-2834-6340 (2017) Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors. PhD thesis, University of Liverpool.

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