Planar InAs photodiodes fabricated using He ion implantation

Sandall, Ian ORCID: 0000-0003-3532-0373, Tan, Chee Hing, Smith, Andrew and Gwilliam, Russell (2012) Planar InAs photodiodes fabricated using He ion implantation. OPTICS EXPRESS, 20 (8). pp. 8575-8583.

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Abstract

We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1x10¹⁸ cm⁻³, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10⁵ Ω/Square in an 'as-implanted' sample and with subsequent annealing this can be further increased to 1x10⁷ Ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	27 Apr 2016 15:14
Last Modified:	19 Jan 2023 07:37
DOI:	10.1364/OE.20.008575
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3000895