Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN


Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne AH, Gibbon, James T, Dhanak, Vinod R, Partida-Manzanera, Teresa, Roberts, Joseph W, Potter, Richard ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332, Cho, Sung-Jin, Thayne, Iain G et al (show 2 more authors) (2020) Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (6). 063003-063003.

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Abstract

A comprehensive study of the band alignments of TixAl1-xOy (with x = 9%, 16%, 25%, 36%, 100%) and GaxAl1-xOy (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and variable angle spectroscopic ellipsometry. The permittivity, k, has been found to be enhanced from ∼10 for 9% Ti in TixAl1-xOy to 76 for TiO2, however TiO2 brings an unfavorable band alignment and a small conduction band offset (<0.1 eV) with GaN. The latter has been observed for all studied TixAl1-xOy films deposited on GaN. On the other hand, GaxAl1-xOy films show a substantial increase of the band gap from 4.5 eV for Ga2O3 to 5.5 eV for x = 20% Ga and 6.0 eV for x = 5% Ga. A strong suppression of leakage current in associated GaxAl1-xOy-based metal insulator semiconductor capacitors has also been observed, showing promise for device applications.

Item Type: Article
Uncontrolled Keywords: GaN, Dielectrics, High-k, Atomic layer deposition, X-ray photoelectron spectroscopy, Band offsets, Kraut method, Metal insulator semiconductor capacitor
Depositing User: Symplectic Admin
Date Deposited: 23 Jul 2020 08:03
Last Modified: 18 Jan 2023 23:39
DOI: 10.1149/2162-8777/aba4f4
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3094937
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