A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage

Zhang, Jinyao ORCID: 0000-0001-9135-555X, Huang, Yi ORCID: 0000-0001-7774-1024 and Zhou, Jiafeng ORCID: 0000-0001-5829-3932 (2024) A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage. IEEE Transactions on Circuits and Systems II: Express Briefs, 71 (2). pp. 547-551.

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Official URL: http://dx.doi.org/10.1109/tcsii.2023.3313879

Abstract

This brief focuses on a highly efficient rectifier based on a high-electron-mobility transistor (HEMT) with a wide dynamic range of input power. Due to the nonlinear characteristics of HEMT, the impedance mismatch at different input power levels is a major challenge in rectifier design. Herein, a variable voltage gate self-bias network is proposed. It can dynamically generate a DC voltage according to the input power level, and continuously provide the optimal bias for the HEMT, thereby improving the RF to DC conversion efficiency in a wide input power range. This design does not require any external sensing or dynamic control circuit. The power needed by the self-bias network is provided using a weak coupling structure placed at the input port, which couples a small amount of the received RF power to operate the self-bias network. It is demonstrated that the proposed rectifier can achieve a dynamic operating power range of 24 dB (from 1 to 25 dBm) for over 60% conversion efficiency, or 16 dB for over 70% conversion efficiency in the measurement.

Item Type:	Article
Uncontrolled Keywords:	7 Affordable and Clean Energy
Depositing User:	Symplectic Admin
Date Deposited:	06 Oct 2023 07:27
Last Modified:	17 Mar 2024 11:23
DOI:	10.1109/tcsii.2023.3313879
Related URLs:	Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3116676