A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits

Li, Ang ORCID: 0000-0002-1872-5005, Shen, Yi, Li, Ziqian, Li, Fan, Sun, Ruize, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen (2022) A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits. IEEE Electron Device Letters, 44 (2). pp. 333-336.

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Abstract

We report the monolithic realization of on-chip temperature sensing design using four transistors (4T) in gallium nitride (GaN) technology. The temperature sensor consists of a voltage reference and a logic inverter, both of which are built from enhancement-mode (E-mode) and depletion-mode (D-mode) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The temperature-insensitive voltage reference outputs a very stable voltage as the input of the logic inverter, which exhibits good temperature dependence in its voltage transfer characteristics. As the temperature varies from 25 to 250 °C, the output voltage of the logic inverter changes linearly. By configuring the active-load D-mode transistor as a two-dimensional electron gas (2DEG) resistor in the logic inverter, the temperature sensing solution is improved further, showing stable sensing output, higher sensitivity (31.28 mV/°C), better linearity ( R2 = 0.995) and smaller error (±2.74 °C). This demonstrates a compact monolithic sensor for monitoring the on-chip temperature of GaN power integrated circuits (ICs) for protection and control.

Item Type:	Article
Additional Information:	(c) 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords:	AlGaN/GaN, MIS-HEMT, monolithic integration, temperature sensor
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User:	Symplectic Admin
Date Deposited:	12 Apr 2023 09:11
Last Modified:	15 Mar 2024 03:07
DOI:	10.1109/led.2022.3226684
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3169536