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Zhao, Yinchao, Liu, Chenguang, Sun, Yi, Yi, Ruowei, Cai, Yutao, Li, Yinqing, Mitrovic, Ivona ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul ORCID: 0000-0002-2295-6332, Yang, Li et al (show 1 more authors) and Zhao, Cezhou (2019) 3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode. JOURNAL OF ALLOYS AND COMPOUNDS, 803. pp. 505-513.

Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou (2018) Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-6-6 - 2018-6-8.

Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Zhao, Cezhou (2020) Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8. pp. 95642-95649.

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Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors) , Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou (2020) Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4). 041001-041001.

Cai, Yutao, Zhang, Yuanlei, Liang, Ye, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Liu, Wen and Zhao, Cezhou (2021) Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrO<i>_x</i> Charge Trapping Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (9). pp. 4310-4316.

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Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Zhao, Cezhou (2019) Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics, 58 (5). 056505-056505.

Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332 (2016) Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372. pp. 14-28.

Cai, Yutao (2019) Realization of normally-off GaN HEMTs for high voltage and low resistance applications. PhD thesis, University of Liverpool.