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Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) 3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania,Italy.

Almalki, S, Tekin, SB, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036 and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2021) Applicability of Sc₂O₃ versus Al₂O₃ in MIM rectifiers for IR rectenna. SOLID-STATE ELECTRONICS, 184. p. 108082.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Althobaiti, M, Hesp, D, Dhanak, V ORCID: 0000-0001-8053-654X, Santoni, A, Weerakkody, D, Sedghi, N ORCID: 0000-0002-2004-6159, Chalker, P ORCID: 0000-0002-2295-6332, Henkel, C et al (show 5 more authors) , Dentoni Litta, E, Hellstrom, P-E, Ostling, M, Tan, H and Schamm-Chardon, S (2015) Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117 (21). 214104-.

Nemr Noureddine, I, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania, Italy.

Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Zhan, X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2015) Conduction mechanisms in Al-Ta₂O₅-Al₂O₃-Al rectifiers. In: 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015-6-29 - 2015-7-2, University of Glasgow.

Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, DADC, Sedghi, N ORCID: 0000-0002-2004-6159, Ralph, Jason F ORCID: 0000-0002-4946-9948, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Luo, Z and Beeby, S (2018) Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112 (1).

Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Ralph, JF ORCID: 0000-0002-4946-9948, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Design of an All-Dielectric Double Barrier Resonant Tunneling Diode for THz Energy Harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, Liverpool, UK.

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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X, Zhang, WD, Zhang, JF et al (show 3 more authors) , Hall, S ORCID: 0000-0001-8387-1036, Robertson, J and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111 (9). 092904-.

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Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Noureddine, I Nemr, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR, Phillips, LJ ORCID: 0000-0001-5181-1565, Treharne, R et al (show 1 more authors) and Durose, K ORCID: 0000-0003-1183-3211 (2015) Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147. pp. 298-301.

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Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Nemr Noureddine, I, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Phillips, LJ ORCID: 0000-0001-5181-1565, Treharne, R et al (show 1 more authors) and Durose, K ORCID: 0000-0003-1183-3211 (2015) Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. , University of Leeds, Leeds, UK.

Brunell, I, Sedghi, N ORCID: 0000-0002-2004-6159, Dawson, K ORCID: 0000-0003-3249-8328, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping. In: 16th International Atomic Layer Deposition Conference, 2016-7-24 - 2016-7-27, Dublin, Ireland.

Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Enhanced switching in Ta2O5 RRAM by fluorine doping. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania, Italk.

Weerakkody, DAD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, J, Chalker, PR ORCID: 0000-0002-2295-6332, Zhenhua, L and Beeby, S (2016) Experimental tunnel-barrier rectifiers for IR energy harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - NANOENERGY 2016, 2016-7-27 - 2016-7-29, University of Liverpool.

Noureddine, I Nemr, Sedghi, N ORCID: 0000-0002-2004-6159, Wrench, J, Chalker, P ORCID: 0000-0002-2295-6332, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2021) Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184 (Oct.). p. 108053.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Dhanak, VR ORCID: 0000-0001-8053-654X, Linhart, WM, Veal, TD ORCID: 0000-0002-0610-5626, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D et al (show 1 more authors) and Dimoulas, A (2014) Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115 (11). 114102: 1-16.

Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N ORCID: 0000-0002-2004-6159, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2015) Hafnia and alumina on sulphur passivated germanium. Vacuum, 122. pp. 306-309.

Nemr Noureddine, I, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2016) High speed rectifiers for coupling efficiency enhancement in THz rectenna scavengers. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, University of Liverpool.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Mather, S, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D, Dimoulas, A et al (show 4 more authors) , Henkel, C, Litta, E Dentoni, Hellstrom, P-E and Ostling, M (2014) Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2). pp. 73-88.

Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Ralph, JF ORCID: 0000-0002-4946-9948, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Low Voltage Rectification in Resonant Tunneling Diodes for Use in THz Energy Harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, Liverpool University.

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Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2017) Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64 (3). pp. 1225-1230.

Tekin, SB, Das, P, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Werner, M, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2020) Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020-9-1 - 2020-9-30, Caen, Normandy, France.

Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Ralph, JF ORCID: 0000-0002-4946-9948, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Luo, Z and Beeby, S (2016) Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72 (2). pp. 287-299.

Sedghi, N, Mitrovic, IZ, Ralph, JF and Hall, S ORCID: 0000-0001-8387-1036 (2014) 'Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna'. In: WODIM, Tyndall Insitute, Ireland. (In Press)

Noureddine, I Nemr, Sedghi, N ORCID: 0000-0002-2004-6159, Wrench, JS, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2022) <p>Structural and electrical investigation of MI₂M and MI₃M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. p. 108349.

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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF et al (show 3 more authors) , Robertson, J, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). 102902-1-102902-4.