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Number of items: 26.


Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li and Zhao, Cezhou
(2020) Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application. NANOMATERIALS, 10 (8).


Jones, L, Das, Partha ORCID: 0000-0003-1147-6541, Manzanera, TP, Gibbon, JT ORCID: 0000-0003-1548-0791, Potter, Richard ORCID: 0000-0003-0896-4536, Chalker, Paul ORCID: 0000-0002-2295-6332, Mahapatra, Rajat, Dhanak, Vin and Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905
(2019) Atomic Layer Deposited TiO2/Al2O3 Nanolaminates on GaN. In: Isulating Films on Semiconductors (INFOS) 2019, 2019-06-30 - 2019-07-03, Clare College, University of Cambridge.


Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne AH, Gibbon, James T, Dhanak, Vinod R, Partida-Manzanera, Teresa, Roberts, Joseph W, Potter, Richard ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332, Cho, Sung-Jin, Thayne, Iain G
et al (show 2 more authors) (2020) Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (6).


Gibbon, JT, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR, Mitrovic, Ivona Z and Dhanak, VR
(2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8 (6). 065011 - 065011.


Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR
(2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP ADVANCES, 8 (6).


Noureddine, Ibrahim Nemr, Sedghi, Naser ORCID: 0000-0002-2004-6159, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Hall, Steve ORCID: 0000-0001-8387-1036
(2017) Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35 (1).


Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou
(2018) Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-06-06 - 2018-06-08.


Liu, Qihan, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Xu, Wangying, Yang, Li and Zhao, Ce Zhou
(2020) Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors. Advanced Electronic Materials. 2000072 - 2000072.


Phillips, Laurie J ORCID: 0000-0001-5181-1565, Rashed, Atef M, Treharne, Robert E, Kay, James, Yates, Peter, Mitrovic, Ivona Z, Weerakkody, Ayendra, Hall, Steve ORCID: 0000-0001-8387-1036 and Durose, Ken ORCID: 0000-0003-1183-3211
(2015) Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process. Data in brief, 5. 926 - 928.


Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Zhao, Cezhou, Hall, Steve ORCID: 0000-0001-8387-1036, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun
(2019) Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10 (7).


Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z, Zhao, Cezhou ORCID: 0000-0002-4783-960X, Hall, Steve, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun ORCID: 0000-0002-4783-960X
(2019) Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. Micromachines, 10 (7).


Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Zhao, Cezhou
(2020) Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8. 95642 - 95649.


Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 2 more authors) (2020) Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4).


Jin, Jidong, Zhang, Jiawei, Kemal, Remzi E, Luo, Yi, Bao, Peng, Althobaiti, Mohammed, Hesp, David, Dhanak, Vinod R, Zheng, Zhaoliang ORCID: 0000-0001-6741-6148, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905
et al (show 2 more authors) (2016) Effects of annealing conditions on resistive switching characteristics of SnOx thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673. 54 - 59.


Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li
et al (show 3 more authors) (2015) Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8 (12). 8169 - 8182.


Zhao, Tianshi, Zhao, Chun, Zhang, Jianfu, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee ORCID: 0000-0003-0199-7386, Yang, Li, Song, Tao and Zhao, Cezhou
(2020) Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation. Journal of Alloys and Compounds, 829.


Zhao, Tianshi, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Gee Lim, Eng, Yang, Li, Qiu, Chenghu and Zhao, Ce Zhou
(2020) Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020-04-28 - 2020-05-30.


Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne, Gibbon, James, Dhanak, Vinod R, Mahapatra, Rajat, Partida Manzanera, Teresa, Roberts, Joseph W, Potter, Richard J ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332
et al (show 2 more authors) (2020) (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97 (1). 67 - 81.


Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li, Wen, Jiacheng, Huang, Yanbo, Li, Puzhuo and Zhao, Cezhou
(2020) Memristive Non-Volatile Memory Based on Graphene Materials. MICROMACHINES, 11 (4).


Shaw, Andrew, Chang, Gao, Jin, Jidong, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Hall, Steve ORCID: 0000-0001-8387-1036
(2015) Modelling of Mg doped ZnO TFTs. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), 2015-06-29 - 2015-07-02, University of Glasgow, Glasgow, UK.


Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016) Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372. 14 - 28.


Nemr Noureddine, I
(2018) Resonant tunnelling nanostructures for THz energy harvesting. PhD thesis, University of Liverpool.


Cao, Zhongming, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Sandall, Ian ORCID: 0000-0003-3532-0373
(2020) Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-k Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10). 4269 - 4273.


Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 1 more authors) (2017) Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12). 2913 - 2921.


Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). 673 - 682.


Xu, Hui, Ye, Haitao, Coathup, David, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Weerakkody, Ayendra D and Hu, Xiaojun
(2017) An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy. APPLIED PHYSICS LETTERS, 110 (3).

This list was generated on Sat Nov 28 09:46:53 2020 GMT.